品牌：无锡光磊型号：GL8N65A类型：绝缘栅型场效应管/MOS场效应管沟道类型：高压MOS管导电方式：高压MOS管适合频率：高压MOS管封装外形：TO-220General Description：
GL7N80FA9 the silicon N-channel Enhanced VDMOSFETS, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and higher
efficiency. The package form is TO-220F, which accords with the
RoHS standard.
Features：
 Fast Switching
 Low Gate Charge and Rdson
 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test