品牌:CREE型号:IXYH40N120B3D1类型:其他封装外形:其他材质:P-FET硅P沟道工作电压:1200V工作电流:86AAIXYH40N120B3D1:碳化硅功率 MOSFET
he IXYH40N120B3D1 is a 1200 V and 86 A High Speed XPT GenX3 Extreme Light Punch Through IGBT With Diode, available in TO-247 Package.
Features:
- Optimized for Low Switching Losses
- Square RBSOA
- International Standard Packages
- Anti-Parallel Ultra Fast Diode
- Positive Thermal Coefficient of Vce(sat)
- Avalanche Rated
- High Current Handling Capability
Advantages:
- High power density
- Low gate drive requirement