品牌：青岛佳恩型号：JNFP40N120M类型：绝缘栅型场效应管/MOS场效应管沟道类型：N型沟道导电方式：增强型适合频率：高频封装外形：CER-DIP/陶瓷直插材质：N-FET硅N沟道工作电压：40AV工作电流：1200VA
JNFP40N120M
IGBT Module
Features：
l IGBT Inverter Short Circuit Rated 10μs
l IGBT Inverter Low Saturation Voltage
l Low Switching Loss
l Low Stray Inductance
l Lead Free, Compliant With RoHS Requirement
Applications：
l Industrial Inverters
l Servo Applications
IGBT-Inverter
Absolute Maximum Ratings(TC= 25℃ unless otherwise specified)
Symbol | Description | Value | Units |
VCES | Collector-Emitter Blocking Voltage | 1200 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Continuous Collector Current | TC= 80℃ | 40 | A |
TC= 25℃ | 80 | A |
ICM(1) | Peak Collector Current Repetitive | TJ= 150℃ | 80 | A |
tSC | Short Circuit Withstand Time | TJ= 150℃ | >10 | μs |
PD | Maximum Power Dissipation (IGBT) | TC= 25℃ TJmax=150℃ | 255 | W |
Characteristic Values(TJ= 25℃ unless otherwise specified)
Symbol | Description | Test Conditions | Min. | Typ. | Max. | Units |
ICES | Collector-Emitter Leakage Current | VGE= 0V, VCE = VCES | TJ= 25℃ | | | 1 | mA |
IGES | Gate-Emitter Leakage Current | VGE= VGES, VCE= 0V | TJ= 25℃ | | | 200 | nA |
VGE(th) | Gate-Emitter Threshold Voltage | IC= 1 mA, VCE= VGE | 4.5 | 5.2 | 6.5 | V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 40A , VGE = 15V | TJ= 25℃ | | 1.90 | 2.10 | V |
TJ= 125℃ | | 2.20 | 2.40 | V |
Cies | Input Capacitance | VCE= 25V, VGE= 0V , f＝1MHz | | 2.2 | | nF |
Coes | Output Capacitance | | 0.21 | | nF |
td(on) | Turn-on Delay Time | VCC= 600V, IC= 40A, RG= 33??, VGE=±15V , Inductive Load, TJ= 25℃ | | 115 | | ns |
tr | Rise Time | | 70 | | ns |
td(off) | Turn-off Delay Time | | 475 | | ns |
tf | Fall Time | | 285 | | ns |
Eon | Turn-on Switching Loss | | 6.2 | | mJ |
Eoff | Turn-off Switching Loss | | 2.4 | | mJ |
Ets | Total Switching Loss | | 8.6 | | mJ |
td(on) | Turn-on Delay Time | VCC= 600V, IC= 40A, RG= 20??, VGE=±15V, Inductive Load, TJ= 125℃ | | 105 | | ns |
tr | Rise Time | | 75 | | ns |
td(off) | Turn-off Delay Time | | 505 | | ns |
tf | Fall Time | | 445 | | ns |
Eon | Turn-on Switching Loss | | 8.1 | | mJ |
Eoff | Turn-off Switching Loss | | 3.9 | | mJ |
Ets | Total Switching Loss | | 12.0 | | mJ |
Qg | Internal Gate Resistor | VCE= 600V, IC= 40A, VGE= -15V ~ +15V | | 445 | | nC |
RBSOA | Reverse Bias Safe Operating Area | IC= 80A ,VCC= 960V, Vp =1200V, Rg = 15??, VGE=+15V to 0V, TJ=150°C | Trapezoid | |
SCSOA | Short Circuit Safe Operating Area | VCC= 600V, VGE= 15V, TJ= 150℃ | 10 | | | μs |
Diode-Inverter
Absolute Maximum Ratings(TC= 25℃unless otherwise specified)
Symbol | Description | Value | Units |
VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
IF | DC Forward Current | 40 | A |
IFRM | Repetitive Peak Forward Current | 80 | A |
Characteristic Values
Symbol | Description | Conditions | Min. | Typ. | Max. | Units |
VF | Forward Voltage | IF＝40A, VGE= 0V | TJ= 25℃ | | 2.1 | | V |
TJ= 150℃ | | 2.1 | |
Irr | Peak Reverse Recovery Current | IF＝40A, di/dt = 835A/μs, Vrr= 600V, VGE= -15V | TJ= 25℃ | | 35 | | A |
TJ= 125℃ | | 45 | |
Qrr | Recovered Charge | TJ= 25℃ | | 3.9 | | μC |
TJ= 125℃ | | 6.0 | |
Erec | Reverse Recovery Energy | TJ= 25℃ | | 0.7 | | mJ |
TJ= 125℃ | | 1.3 | |
Diode-Rectifier
Absolute Maximum Ratings(TC= 25℃ unless otherwise specified)
Symbol | Description | Value | Units |
VRRM | Repetitive Peak Reverse Voltage | TJ=25℃ | 1800 | V |
IFRMSM | Forward Current RMS Maximum Per Diode | TJ=80℃ | 50 | A |
IRMSM | Maximum RMS Current At Rectifier Output | TC= 80℃ | 60 | A |
IFSM | Surge Current @tp=10 ms | TJ=25℃ | 315 | A |
TJ=150℃ | 270 |
I2t | tp=10 ms | TJ=25℃ | 500 | A2s |
TJ=150℃ | 370 |
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