品牌：其他型号：LH253功能：全级性被检测对象性质：间接应用加工定制：加工定制
联系人：张露云
联系电话：18958062346
LH8253MH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress.
LH8MH includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries.
LHMH8 is rated for operation between the ambient temperatures –40℃ and +85℃ for the E temperature range. The four package styles available provide magnetically optimized solutions for most applications. Package types SO is an SOT-23(1.1 mm nominal height), SQ is an QFN2020-3(0.55 mm nominal height), a miniature low-profile surface-mount package, while package UA is a three-lead ultra mini SIP for through-hole mounting.
The package type is in aHalogen Free version was verified by third party Lab.
Features and Benefits
l CMOS Hall IC Technology
l Solid-State Reliability much better than reed switch
l Omni polar output switches with absolute value of North or South pole from magnet
l Low power consumption(2.6mA)
l High Sensitivity for reed switch replacement
l 100% tested at 125℃ for K.
l Small Size
l ESD HBM ±4KV Min
l COST competitive
Applications
l Solid state switch
l Lid close sensor for power supply devices
l Magnet proximity sensor for reed switch replacement in high duty cycle applications.
l Safety Key on sporting equipment
l Revolution counter
l Speed sensor
l Position Sensor
l Rotation Sensor
l Safety Key
091713Page 1Rev. 1.04
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| 型号LH8253 |
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| Note:Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum- |
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| rated conditions for extended periods may affect device reliability. |
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| Electrical Specifications |
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| DC Operating Parameters TA=+25℃, VDD=5.0V |
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| Parameters |
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| Test Conditions |
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| Typ | Max |
| Units |
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| Supply Voltage,(VDD) |
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| Operating |
| 2.5 |
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| 6 |
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| V |
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| Supply Current,(IDD) |
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| Average |
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| 2.6 | 6.0 |
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| mA |
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| Output Low Voltage,(VDSON) |
| IOUT=10mA |
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| 400 |
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| mV |
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| Output Leakage Current,(Ioff) |
| IOFF | BOUT = 5V |
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| 10 |
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| uA |
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| Output Rise Time,(TR) |
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| RL=10kΩ, CL =20pF |
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| 0.45 |
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| uS |
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| Output Fall Time,(TF) |
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| RL=10kΩ; CL =20pF |
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| 0.45 |
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| uS |
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| Electro-Static Discharge |
| HBM |
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| 4 |
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| KV |
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| Operate Point, | (BOPS) | S pole to branded side, B > BOP, Vout On |
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| 30 | 60 |
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| Gauss |
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| (BOPN) |
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| N pole to branded side, B > BOP, Vout On |
| -60 |
| -30 |
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| Release Point | (BRPS) |
| S pole to branded side, B < BRP, Vout Off |
| 5 |
| 25 |
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| Gauss |
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| (BRPN) |
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| N pole to branded side, B < BRP, Vout Off |
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| -25 | -5 |
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| Hysteresis,(BHYS) |
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| |BOPx - BRPx| |
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| 5 |
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| Gauss |
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