品牌：青岛佳恩型号：JFPC12N60C类型：绝缘栅型场效应管/MOS场效应管沟道类型：N型沟道导电方式：增强型适合频率：高频封装外形：CER-DIP/陶瓷直插材质：N-FET硅N沟道工作电压：600V工作电流：12A最大允许功耗：7200W用途：开关电源外形尺寸：30mm加工定制：是
area class="lazyLoad">600V N-Channel MOSFET
Features - 12A, 600V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability |
General Description
This Power MOSFET is produced using advanced
planar stripe DMOS technology.This advanced
technology has been especially tailored to minimize
on-state resistance,provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devicesare well suited for high efficiency
switched mode powersupplies,active power factor
correctionbased on halfbridge topology.
Absolute Maximum RatingsTC= 25℃unless otherwise noted
Symbol | Parameter | JFPC12N60C | JFFC12N60C | Units |
VDSS | Drain – Source Voltage | 600 | V |
ID | Drain Current | Continuous ( TC= 25℃) | 12 | 12* | A |
Continuous ( TC= 100℃) | 7.2 | 7.2* | A |
IDM | Drain Current - Pulsed ( Note 1 ) | 48 | A |
VGSS | Gate – Source Voltage | ±30 | V |
EAS | Single Pulsed Avalanche Energy ( Note 2 ) | 512 | mJ |
IAR | Avalanche Current ( Note 1 ) | 12 | A |
EAR | Repetitive Avalanche Energy ( Note 1 ) | 22 | mJ |
dv/dt | Peak Diode Recovery dv/dt ( Note 3 ) | 4.5 | V/ns |
PD | Power Dissipation ( TC= 25℃) | 220 | 40 | W |
-Derate above 25℃ | 1.76 | 0.33 | W/℃ |
TJ,TSTG | Operating and Storage Temperature Range | -55 to +150 | ℃ |
TL | Maximum lead temperature for soldering purposes | 300 | ℃ |
1/8” frome case for 5 seconds |
*Drain current limited by maximum junction temperature.
Thermal characteristics
Symbol | Parameter | JFPC12N60C | JFFC12N60C | Units |
RθJC | Thermal Resistance, Junction-to-Case | 0.57 | 3.07 | ℃/W |
RθJS | Thermal Resistance, Case-to-Sink Typ. | 0.5 | -- | ℃/W |
RθJA | Thermal Resistance, Junction-to-Ambient | 62.5 | 62.5 | ℃/W |
Electrical CharacteristicsTC= 25℃unless otherwise noted
Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
Off Characteristics |
BVDSS | Drain – Source Breakdown Voltage | VGS= 0 V, ID= 250 uA | 600 | -- | -- | V |
⊿BVDSS/⊿TJ | Breakdown Voltage Temperature Coefficient | ID= 250 uA, Referenced to 25℃ | -- | 0.6 | -- | V/℃ |
IDSS | Zero Gate Voltage Drain Current | VDS= 600 V, VGS= 0 V | -- | -- | 1 | uA |
VDS= 480 V, Tc = 125℃ | -- | -- | 10 | uA |
IGSSF | Gate-Body Leakage Current, Forward | VGS= 30 V, VGS= 0 V | -- | -- | 100 | nA |
IGSSR | Gate-Body Leakage Current, Reverse | VGS= -30 V, VGS= 0 V | -- | -- | -100 | nA |
On Characteristics |
VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= 250 uA | 2.0 | -- | 4.0 | V |
RDS(on) | Static Drain-Source on-Resistance | VGS= 10V, ID= 6.0 A | -- | 0.53 | 0.75 | Ω |
gFS | Forward Transconductance | VDS= 40 V, ID= 6.0 A ( Note 4 ) | -- | 11.3 | -- | S |
Dynamic Characteristics |
Ciss | Input Capacitance | VDS= 25 V, VGS= 0 V, f = 1.0 MHz | -- | 1980 | -- | pF |
Coss | Output Capacitance | -- | 170 | -- | pF |
Crss | Reverse Transfer Capacitance | -- | 10 | -- | pF |
Switching Characteristics |
td(on) | Turn-On Delay Time | VDS= 300 V, ID= 12.0 A , RG= 25Ω , VGS= 10 V (Note 4,5 ) | -- | 27 | -- | ns |
tr | Turn-On Rise Time | -- | 25 | -- | ns |
td(off) | Turn-Off Delay Time | -- | 62 | -- | ns |
tf | Turn-Off Fall Time | -- | 39.5 | -- | ns |
Qg | Total Gate Charge | VDS= 480 V, ID= 12.0 A VGS= 10 V (Note 4,5 ) | -- | 40 | -- | nC |
Qgs | Gate-Source Charge | -- | 9.8 | -- | nC |
Qgd | Gate-Drain Charge | -- | 14.5 | -- | nC |
Drain – Source Diode Characteristics and Maximum Ratings |
IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 12 | A |
ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 48 | A |
VSD | Drain-Source Diode Forward Voltage | VGS= 0 V, IS= 12.0 A | -- | -- | 1.4 | V |
trr | Reverse Recovery Time | VGS= 0 V, IS= 12.0 A | -- | 580 | -- | ns |
Qrr | Reverse Recovery Charge | dIF/dt = 100 A/us ( Note 4 ) | -- | 3.5 | -- | uC |
Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature2. L = 6.3mH , IAS= 12A, VDD= 50V,RG= 25Ω, Starting TJ= 25℃3. ISD≤12.0A, di/dt≤100A/us, VDD≤BVDSS, Starting TJ= 25°C4. Pulsed Test : Pulsed width≤300us, Duty cycle ≤ 2%5. Essentially independent of operating temperature
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