品牌：HS 合芯型号：13001 0.66芯片用途：功率结构：其他半导体材料：硅封装方式：塑料封装
area class="lazyLoad">三极管13001,TO-92 合芯半导体原厂生产，为电源充电器厂家使用的功率开关三极管，具有反压高于490v，价格实惠的特征，具体参数如下：
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LIMMITING VALUES(Tj=25℃Unless Otherwise Stated)
Parameter | Symbol | Value | Unit |
Collector-base Voltage | VCBO | 600 | V |
Collector-Emitter Voltage | VCEO | 400 | V |
Emitter-base Voltage | VEBO | 7 | V |
Collector Current | Ic | 0.2 | A |
Total Power Dissipattion | Pc | 0.65 | W |
Storage Temperature | Tstg | -65~150 | ℃ |
Junction Temperature | Tj | 150 | ℃ |
ELECTRICAL CHARACTERISTICS（Tj=25℃Unless Otherwise Stated）
Parameter | Symbol | Test conditions | Min | Max | Unit |
Collector-base Breakdown Voltage | BVCBO | Ic=0.5mA,Ie=0 | 600 | | V |
Collector-Emitter Breakdown Voltage | BVCEO | Ic=10mA,Ib=0 | 400 | | V |
Emitter-base Breakdown Voltage | BVEBO | Ie=1mA,Ic=0 | 7 | | V |
| Collector-base Cutoff Current | ICBO | Vcb=600V,Ie=0 | | 100 | μA |
| Collector- EmitterCutoff Current | ICEO | Vce=400V,Ib=0 | | 20 | μA |
Emitter-base Cutoff Current | IEBO | Veb=7V,Ic=0 | | 100 | μA |
| DC Current Gain | hFE | Vce=20V,Ic=10mA | 10 | 40 | |
Collector-Emitter Saturation Voltage | VCE(sat) | Ic=50mA,Ib=10mA | | 0.5 | V |
base-Emitter Saturation Voltage | VBE(sat) | Ic=50mA,Ib=10mA | | 1.2 | V |
Storage Time | Ts | Ic=0.1A, (UI9600) | | 2 | μS |
| Falling Time | Tf | Vce=20V,Ic=20mA f=1MHZ | 5 | | MHZ |
CLASSIFICATION OF Hfe(1)
| Range | 10-15 | 15-20 | 20-25 | 30-35 |
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