品牌：青岛佳恩型号：JNFP15N120MY21类型：绝缘栅型场效应管/MOS场效应管沟道类型：N型沟道导电方式：增强型适合频率：高频封装外形：CER-DIP/陶瓷直插材质：N-FET硅N沟道工作电压：15AV工作电流：1200VA
area class="lazyLoad"> IGBT模块/IGBT Module
特性：
l 10μs短路承受时间
l 低饱和压降: VCE (sat)= 2.20V @ IC= 15A , TC=25℃
l 低开关损耗
l 100% RBSOA测试 （2倍额定电流）
l 低杂散电感
l 无铅模块，符合RoHS要求
Features：
l Short Circuit Rated 10μs
l Low Saturation Voltage: VCE (sat)= 2.20V @ IC= 15A , TC=25℃
l Low Switching Loss
l 100% RBSOA Tested（2×Ic）
l Low Stray Inductance
l Lead Free,Compliant with RoHS Requirement
应用： Applications：
l 工业变频器 Industrial Inverters
l 伺服应用 Servo Applications
IGBT,逆变器/ IGBT,Inverter 最大额定值/ Maximum Rated Values |
VCES | 集电极-发射机电压 Collector-Emitter Blocking Voltage | 1200 | V |
VGES | 门极－发射极电压 Gate-Emitter Voltage | ±20 | V |
IC | 集电极直流电流 Continuous Collector Current | TC= 80℃, | 15 | A |
TC= 25℃ | 30 | A |
ICM(1) | 集电极脉冲电流 Peak Collector Current Repetitive | TJ= 150℃ | 30 | A |
tSC | 短路承受时间 Short Circuit Withstand Time | >10 | μs |
PD | 单桥臂IGBT最大耗散功率 Maximum Power Dissipation (IGBT) | TC= 25℃ TJmax=150℃ | 150 | W |
IGBT的电气特性 Electrical Characteristics of IGBT(TJ= 25℃)
静态特性/Static characteristics Min Typ Max
VGE(th) | 门极－发射极阈值电压 Gate-Emitter Threshold Voltage | IC= 1 mA, VCE= VGE | 4.0 | 5.0 | 6.0 | V |
VCE(sat) | 集电极－发射极饱和电压 Collector-Emitter Saturation Voltage | IC= 15 A, VGE = 15V | TJ= 25℃ | | 2.20 | 2.40 | V |
TJ= 125℃ | | 2.70 | | V |
ICES | 集电极－发射极漏电流 Collector-Emitter Leakage Current | VGE= 0V, VCE = VCES, TJ= 25℃ | | | 1 | mA |
IGES | 门极－发射极漏电流 Gate-Emitter Leakage Current | VGE= 0V, VCE = VCES, TJ= 25℃ | | | 200 | nA |
Cies | 输入电容 Input Capacitance | VCE= 25V, VGE= 0V , f＝1MHz | | 1.5 | | nF |
Coes | 输出电容 Output Capacitance | | 0.13 | | nF |
开关特性/Switching Characteristics
td(on) | 开通延迟时间 Turn-on Delay Time | VCC= 600V,IC= 15A, RG = 68 ????????,VGE= ±15V, Inductive Load | TJ= 25℃ | | 120 | | ns |
TJ= 125℃ | | 100 | |
tr | 上升时间 Rise Time | TJ= 25℃ | | 60 | | ns |
TJ= 125℃ | | 50 | |
td(off) | 关断延迟时间 Turn-off Delay Time | TJ= 25℃ | | 330 | | ns |
TJ= 125℃ | | 375 | |
tf | 下降时间 Fall Time | TJ= 25℃ | | 280 | | ns |
TJ= 125℃ | | 425 | |
Eon | 开通损耗 Turn-on Switching Loss | TJ= 25℃ | | 1.6 | | mJ |
TJ= 125℃ | | 1.85 | |
Eoff | 关断损耗 Turn-off Switching Loss | TJ= 25℃ | | 0.65 | | mJ |
TJ= 125℃ | | 0.83 | |
Qg | 门极充电电量 Total Gate Charge | TJ= 25℃ | | 130 | | nC |
RBSOA | 安全工作区 RBSOA | IC=30A,VCC=960V,Vp=1200V, Rg = 15????????, VGE=+15V to 0V, TJ=150°C | Trapezoid | |
SCSOA | 短路安全工作区 SCSOA | VCC= 600V, VGE= 15V, TJ= 150℃ | 10 | | | μs |
RθJC | 单桥臂IGBT芯片与外壳间热阻 Junction-To-Case (IGBT Part, Per Leg) | | | 0.83 | ℃/W |
二极管,逆变器/ Diode, Inverter
最大额定值/ Maximum Rated Values
VRRM | 反向重复峰值电压 Repetitive peak reverse voltage | 1200 | V |
IF | 二极管正向直流电流 Diode Continuous Forward Current | 15 | A |
IFM | 二极管正向脉冲电流 Peak FWD Current Repetitive | 30 | A |
二极管的电气特性/Electrical Characteristics of FWD
VFM | 正向压降 Forward Voltage | IC= 15 A , VGE = 15V | TJ= 25℃ | | 1.90 | | V |
TJ= 125℃ | | 2.00 | |
Irr | 反向恢复峰值电流 Peak Reverse Recovery Current | IF＝15A, di/dt =500A/μs, Vrr= 600V, VGE= 15V | TJ= 25℃ | | 15 | | A |
TJ= 125℃ | | 30 | |
Qrr | 反向恢复充电电量 Reverse Recovery Charge | TJ= 25℃ | | 0.54 | | μC |
TJ= 125℃ | | 1.15 | |
Erec | 反向恢复损耗（每脉冲） Reverse Recovery Energy | TJ= 25℃ | | 0.60 | | mJ |
TJ= 125℃ | | 1.18 | |
RθJC | 桥臂二极管芯片与外壳间热阻 Junction-To-Case Diode Part, Per Leg | | 1.81 | | ℃/W
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