JNFP25N120M 工控用IGBT模块替代FP25R12KT3-场效应管-电子元器件-产品库-全球货源网

场效应管

JNFP25N120M 工控用IGBT模块替代FP25R12KT3

2019-01-21 21:45993

信息概况

品牌：青岛佳恩型号：JNFP25N120M类型：绝缘栅型场效应管/MOS场效应管沟道类型：N型沟道导电方式：增强型适合频率：高频封装外形：CER-DIP/陶瓷直插材质：N-FET硅N沟道工作电压：25AV工作电流：1200VA详细说明JNFP25N120M

IGBT Module

Features：

l IGBT Inverter Short Circuit Rated 10μs

l IGBT Inverter Low Saturation Voltage

l Low Switching Loss

l Low Stray Inductance

l Lead Free,Compliant With RoHS Requirement

Applications：

l Industrial Inverters

l Servo Applications

IGBT-Inverter

Absolute Maximum Ratings(TC= 25℃ unless otherwise specified)

Symbol	Description		Value	Units
VCES	Collector-Emitter Blocking Voltage		1200	V
VGES	Gate-Emitter Voltage		±20	V
IC	Continuous Collector Current	TC= 80℃	25	A
IC	Continuous Collector Current	TC= 25℃	50	A
ICM(1)	Peak Collector Current Repetitive	TJ= 125℃	50	A
tSC	Short Circuit Withstand Time	TJ= 150℃	>10	μs
PD	Maximum Power Dissipation (IGBT)	TC= 25℃ TJmax=150℃	220	W

Diode-Inverter

Absolute Maximum Ratings(TC= 25℃unless otherwise specified)

Symbol	Description	Value	Units
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	DC Forward Current	25	A
IFRM	Repetitive Peak Forward Current	50	A

Characteristic Values

Symbol	Description	Conditions		Min.	Typ.	Max.	Units
VF	Forward Voltage	IF＝25A, VGE= 0V	TJ= 25℃		2.0		V
VF	Forward Voltage	IF＝25A, VGE= 0V	TJ= 150℃		2.2		V
Irr	Peak Reverse Recovery Current	IF＝25A, di/dt = 500A/μs, Vrr= 600V, VGE= 15V	TJ= 25℃		25		A
Irr	Peak Reverse Recovery Current		TJ= 125℃		30		A
Qrr	Recovered Charge		TJ= 25℃		2.10		μC
Qrr	Recovered Charge		TJ= 125℃		2.88		μC
Erec	Reverse Recovery Energy		TJ= 25℃		0.95		mJ
Erec	Reverse Recovery Energy		TJ= 125℃		1.30		mJ

Diode-Rectifier

Absolute Maximum Ratings(TC= 25℃ unless otherwise specified)

Symbol	Description		Value	Units
VRRM	Repetitive Peak Reverse Voltage	TJ=25℃	1800	V
IFRMSM	Forward Current RMS Maximum Per Diode	TJ=80℃	35	A
IRMSmax	Maximum RMS Current At Rectifier Output	TJ=80℃	45	A
IFSM	Surge Current @tp=10 ms	TJ=25℃	280	A
IFSM	Surge Current @tp=10 ms	TJ=125℃	250	A
I2t	tp=10 ms	TJ=25℃	500	A2s
I2t	tp=10 ms	TJ=125℃	370	A2s

Characteristic Value

IGBT-Brake-Chopper

Absolute Maximum Ratings(TC= 25℃ unless otherwise specified)
Symbol	Description		Value	Units
VCES	Collector-Emitter Blocking Voltage		1200	V
VGES	Gate-Emitter Voltage		±20	V
IC	Continuous Collector Current	TC= 80℃	15	A
IC	Continuous Collector Current	TC= 25℃	30	A
ICM(1)	Peak Collector Current Repetitive	TJ= 150℃	30	A
PD	Maximum Power Dissipation (IGBT)	TC= 25℃ TJmax=150℃	180	W

Characteristic Values

Symbol	Description	Test Conditions		Min.	Typ.	Max.	Units
ICES	Collector-Emitter Leakage Current	VGE=0V,VCE =VCES	TJ= 25℃			1	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE= 0V	TJ= 25℃			200	nA
VGE(th)	Gate-Emitter Threshold Voltage	IC= 1 mA, VCE= VGE			5.2	6.5	V
VCE(sat)	Collector-Emitter Saturation Voltage	IC=25A ,VGE = 15V	TJ= 25℃		1.90	2.10	V
VCE(sat)	Collector-Emitter Saturation Voltage	IC=25A ,VGE = 15V	TJ= 125℃		2.20		V
Cies	Input Capacitance	VCE= 25V, VGE= 0V , f＝1MHz			1.5		nF
Coes	Output Capacitance	VCE= 25V, VGE= 0V , f＝1MHz			0.13		nF

td(on)	Turn-on Delay Time	VCC= 600V, IC= 15A, RG=68????????, VGE=±15V , Inductive Load, TJ= 25℃		105	ns
tr	Rise Time			50	ns
td(off)	Turn-off Delay Time			260	ns
tf	Fall Time			240	ns
Eon	Turn-on Switching Loss			1.67	mJ
Eoff	Turn-off Switching Loss			0.62	mJ
Ets	Total Switching Loss			2.29	mJ
td(on)	Turn-on Delay Time	VCC= 600V, IC= 15A, RG= 68????????, VGE=±15V, Inductive Load, TJ= 125℃		90	ns
tr	Rise Time			50	ns
td(off)	Turn-off Delay Time			275	ns
tf	Fall Time			360	ns
Eon	Turn-on Switching Loss			2.08	mJ
Eoff	Turn-off Switching Loss			1.13	mJ
Ets	Total Switching Loss			3.21	mJ
Qg	Total Gate Charge	VCE= 600V, IC= 15A, VGE= -15V ~ +15V		145	nC
RBSOA	Reverse Bias Safe Operating Area	IC= 30A ,VCC= 960V, Vp =1200V, Rg = 4.7????????, VGE=+15V to 0V, TJ=125°C	Trapezoid
SCSOA	Short Circuit Safe Operating Area	VCC= 600V, VGE= 15V, TJ= 125℃	10		μs

Diode-Brake-chopper

Absolute Maximum Ratings(TC= 25℃ unless otherwise specified)

Symbol	Description	Value	Units
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	DC Forward Current	15	A
IFRM	Repetitive Peak Forward Current	30	A

Characteristic Values

Symbol	Description	Test conditions		Min.	Typ.	Max.	Units
VFM	Forward Voltage	IF＝15A	TJ= 25℃		1.9		V
VFM	Forward Voltage	IF＝15A	TJ= 125℃		2.0		V
Irr	Peak Reverse Recovery Current	IF＝15A, di/dt =500A/μs, Vrr= 600V, VGE= 15V	TJ= 25℃		15		A
Irr	Peak Reverse Recovery Current		TJ= 125℃		30		A
Qrr	Reverse Recovery Charge		TJ= 25℃		0.54		μC
Qrr	Reverse Recovery Charge		TJ= 125℃		1.15		μC

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