品牌:无锡光磊型号:GL10N65A类型:绝缘栅型场效应管/MOS场效应管沟道类型:高压MOS管导电方式:高压MOS管适合频率:高压MOS管封装外形:TO-220详细说明cription: GL7N80FA9 the silicon N-channel Enhanced VDMOSFETS, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features: Fast Switching Low Gate Charge and Rdson Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test